| 摘要 |
PURPOSE:To prevent a semiconductor substrate from being damaged by a method wherein a first semiconductor layer which is lattice-matched to the substrate is formed and it is used as a mask layer to be used when an epitaxial layer is formed selectively on the semiconductor substrate. CONSTITUTION:A first semiconductor layer 3 which is lattice-matched to a semiconductor substrate 1 is grown on the substrate 1; an opening part is made selectively on the first semiconductor layer 3. Then, the semiconductor substrate 1 in the opening part is etched by making use of the first semiconductor layer 3 as a mask; a recessed part 2 is formed; second semiconductor layers 4 to 6 are formed on the recessed part 2 and the first semiconductor layer 3; in addition, the second semiconductor layers 4 to 6 are polished and flattened. The first semiconductor layer 3 which is lattice-matched to the semiconductor substrate 1 is used as a mask layer formed on the substrate 1. As a result, its film thickness can be formed to be thick in a comparatively short time. Consequently, when the semiconductor layers 4 to 6 grown on it are polished, it is easy to control their polishing depth so that the depth does not reach the semiconductor substrate 1. Thereby, it is possible to obtain a manufacturing method by which the semiconductor substrate is not damaged. |
