发明名称 On-chip transient event detector
摘要 An on-chip transient event detector (FIG., 1) is fabricated onto an integrated circuit chip to provide rapid response to a detected event, such as a transient radiation dose or other condition that can cause transient current pulses. The transient event detector includes a detector circuit 10 that includes a narrow p-channel FET (12), and a wide n-channel FET (14). These detector transistors are coupled together and biased so that the narrow-channel transistor is normally on and the wide-channel transistor is normally off. A transient event, such as a photocurrent induced by radiation, causes a current pulse in the normally off wide-channel transistor that is sufficiently greater than the current in the narrow-channel transistor to cause a change in logic output, providing an event signal. The event signal can be used to disable memory WRITE operations during the transient event. The detector circuit can be integrated with an on-chip time-delay circuit (30) to provide a time-delayed system reset signal.
申请公布号 US5107139(A) 申请公布日期 1992.04.21
申请号 US19900502393 申请日期 1990.03.30
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 HOUSTON, THEODORE W.;LU, HSINDAO E.;BLAKE, TERENCE G.
分类号 H03K19/003 主分类号 H03K19/003
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