A dynamic type semiconductor memory device with a refresh function and method for refreshing the same.

摘要

A dynamic type semiconductor memory device includes m memory blocks (M1-M8; M1-M16) each having a plurality of memory cells, and a plurality of sense amplifier groups (SA1-SA8) associated with the respective memory blocks. Each sense amplifier group senses and amplifies data of a selected memory cell in the related memory block. The memory device further includes a circuit (30) for generating a refresh instruction detecting signal in response to an externally applied refresh mode indicating signal, and circuitry (4 and 20) responsive to a block designating signal and the refresh instruction detecting signal for activating each of the sense amplifier groups in such a manner that only start timings for the sensing operations of the sense amplifier groups related to the designated memory blocks may differ from each other. This activation circuitry activates the respective sense amplifier groups related to the memory blocks designated by the block designating signal in such a manner that their sensing operations may have the same start timing in the normal mode. This device significantly reduces current dissipation in the refresh mode, while the access time in the normal mode is not adversely affected. This device is suitable for use as an internal memory of a battery back-up type computer because of its small load on the battery. <IMAGE>