| 摘要 |
A method of producing a semiconductor device comprises the steps of preparing a stacked structure having an n--type semiconductor substrate, an n+-type diffusion layer formed on the n--type semiconductor substrate and an oxide layer formed on the n+-type diffusion layer, adhering a base substrate on the oxide layer, removing the n--type semiconductor substrate in its entirety by an etching, forming an n--type semiconductor layer on the n+-type diffusion layer to a predetermined thickness by an epitaxial growth, and forming at least an element in the n--type semiconductor layer which constitutes an active layer.
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