| 摘要 |
Transistor-controlled thyristor comprising a number of transistors 2 located in mainly the same plane and between a thyristor 1 belonging to a number of emitters 7, which thyristor in a direction perpendicular to the said plane comprises the said upper emitters 7, a control area 4 and a so-called bulking layer 5 and one or more lower emitters 6, where the upper emitters 7 and the lower emitter 6 constitute the cathode and anode respectively of the thyristor 1 and which thyristor in the said plane has an associated conductive area 8 located at each of the transistors 2 on opposite sides of the emitter 7 located at each transistor. The invention is characterized in that the conductive areas 8 belonging to a number of transistors 2 are connected together electrically in order to distribute the load over the transistors. This means that the power-handling ability is increased, but primarily that so-called filamention is avoided. An embodiment with MOS transistors is described. <IMAGE> |
