发明名称 |
Collector contact of an integrated bipolar transistor |
摘要 |
A collector contact (6) is fabricated which is attached on the side to the collector zone (1), and around which a moat (3) is produced which laterally restricts the collector zone (1). The depth of the moat (3) is so dimensioned to be at least equal to the vertical thickness of the collector zone (1). The collector contact (6) comprises a polycrystalline silicon layer which contains dopants of the same conductivity type as the collector zone (1), and covers a highly doped contacting zone (7') which has been diffused from the adjoining collector contact (6).
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申请公布号 |
US4992843(A) |
申请公布日期 |
1991.02.12 |
申请号 |
US19890433406 |
申请日期 |
1989.11.03 |
申请人 |
DEUTSCHE ITT INDUSTRIES GMBH |
发明人 |
BLOSSFELD, LOTHAR;VOLZ, CHRISTOPH |
分类号 |
H01L29/73;H01L21/331;H01L21/74;H01L29/417;H01L29/732 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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