| 摘要 |
PURPOSE:To prevent the generation of a punch-through by forming a shallow region of the same conduction type as source and drain regions in a channel region and previously burying a deep insulator under the shallow region when a gate electrode is shaped onto a semiconductor substrate through a gate insulating film, the source and drain regions are formed into the substrate on both sides of the gate electrode and a short channel type MOSFET is obtained. CONSTITUTION:An n<-> type layer 6 afterward functioning as a channel region is diffused and formed to the surface layer section of a p<-> type Si substrate 1 and the whole surface is coated with a thin gate SiO2 insulating film 4, and N2 ions are implanted selectively to form a Si3N4 region 7 deeper than n<+> type source region 2 and drain region 3 afterward shaped under the channel region. A gate electrode 5 is formed on the film 4 and the side surface of the gate electrode is surrounded by an insulating film 8, and the regions 2 and 3 are diffused and shaped while using the gate electrode as a mask and offset gate sections 9 are formed at both ends of the channel region. Accordingly, depletion layers extending from the regions 2 and 3 are prevented by the film 7, and a punch-through is avoided.
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