| 摘要 |
PURPOSE:To reduce the size of an effective base area as small as possible and to facilitate the step of manufacturing a semiconductor device which includes a walled emitter type transistor. CONSTITUTION:A resist film 31 is selectively formed, with the film 31 as a mask ions are implanted in the base electrode forming part. The film 31 is exfoliated, a resist film is further formed, is patterned, a window is opened at an emitter part, ions are implanted, the film is annealed, thereby forming an N<+> type emitter region 32. Then, the resist film is removed, aluminum is covered on the overall surface, and is patterned, thereby forming electrodes and wiring layer on a polycrystalline silicon layer 27. Reference numerals 22, 22'' designate oxidized films, reference characters B, E, C designate a base electrode window, an emitter electrode window, a collector electrode window, and a sufficiently thick oxidized film 22 is formed between the region 28 and the region 32 formed therein, and the collector region, i.e., an epitaxial layer 24. |
