METHOD FOR MEARING LATTICE DEFECTS IN SEMICONDUCTOR

摘要

The method for measuiring lattice defects in a semiconductor crystal, comprises applying an ultrasonic pulse to the semiconductor crystal; setting the semiconductor crystal at a predetermined temperature; detecting the ultrasonic pulse passed through the semiconductor crystal and measuring an ultrasonic velocity of the detected ultrasonic pulse passed through the semiconductor crystal with respect to the predetermined temperature to obtain an elastic constant of the semiconductor crystal corresponding to the ultrasonic velocity. A difference between the elastic constant of the semiconductor crystal and an elastic constant of a semiconductor crystal known to have no lattice defects at the same predetermined temperature, is determined.