发明名称 |
Semiconductor memory device and method of fabricating the same |
摘要 |
A semiconductor memory device (DRAM) includes a plurality of island regions, at least one cell transistor disposed on each island region and a cylindrical capacitor surrounding each island region. With such a structure, the capacity of the cell capacitor incorporated into a small space can be increased. Furthermore, a method of fabricating a semiconductor memory device includes a step of forming a groove having a necessary depth in a semiconductor substrate, a step of depositing a membrane having excellent covering characteristics in the groove, a step of etching by using an etching method having a strong anisotropy in the vertical direction while leaving the deposited membrane on a sidewall, and a step of etching the exposed portion of the semiconductor surface deeper in the groove and forming a capacity element and isolation region by using this deep trench.
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申请公布号 |
US4920390(A) |
申请公布日期 |
1990.04.24 |
申请号 |
US19880218456 |
申请日期 |
1988.07.07 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
FUSE, GENSHU;YAMADA, TOSHIO;ODANAKA, SHINJI;FUKUMOTO, MASAKI |
分类号 |
H01L27/108;H01L29/94 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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