| 摘要 |
PURPOSE:To put the upper layer resist of two-layered structures having excellent oxygen plasma etching resistance and sensitivity into practicability by dissolving specific polyorganosil alklyenedisiloxane into an org. solvent to constitute the resist compsn. CONSTITUTION:The resist compsn. formed by dissolving the polyorganosyl alklyenedisiloxane expressed by formula I into the org. solvent is used. In formula I, R1, R2 denote 2 to 6C alkenyl group, 1 to 5C alkyl group or aryl group, R3 denotes an alkylene group, m, n are respectively 0 to 10,000 integer and m+n is >=10. This polyorganosi 1 alkylenedisiloxane is introduced with an alkenyl group as a functional group and not only, therefore, reacts with electron beams but also has the high reactivity with X-rays, far UV light, UV light and visible light. The upper layer resist of the two-layered structures having the excellent sensitivity, resolution and oxygen plasma resistance is obtd. in this way and the accuracy of integrated circuits is improved. |
