| 摘要 |
<p>PURPOSE:To increase the readout speed by discharging the potential at a row line to a prescribed level when the row line is excessively charged. CONSTITUTION:When the voltage at the input terminal SIN1 of a sense amplifier circuit is higher than the sum of the output voltage of an inverter circuit INV1 and a threshold voltage considering the back bias characteristics of an N type MOSFET M12, the FET M12 is set to the normal non-conducted state and the voltage at the output terminal OUT1 of the sense amplifier circuit is charged to a high level by means of a P type MOSFET M11. When the voltage at the terminal SIN1 is higher than the sum of the output voltage of the circuit INV1 and a threshold voltage considering the back bias characteristics of an N type MOSFET M15, the FET M15 is set to the normal conducted state and an electric current flows to the earth potential VS from the terminal SIN1 through N type MOSFETs M14 and M15. As a result, the voltage at the terminal SIN1 is discharged. Therefore, it is not required to excessively charge a row line and readout speed is increased.</p> |
