Semiconductor memory device.

摘要

Memory cells (12,22...N2) disposed in a matrix are divided into a plurality of blocks. Each block is constructed of n (n is a positive integer larger than 2) memory cell columns. One block is selected by one column address. One memory cell column in the n memory cell columns in a selected block is selected by first gate means. One memory cell column in the n memory cell columns in a selected block is selected by second gate means. One memory cell (12,22...N2) in a selected memory cell column is selected by a row address. The data in a selected memory cell (12,22...N2) are stored in a register and output therefrom. <IMAGE>