| 摘要 |
PURPOSE:To improve the accuracy and the density of a pattern by bringing the thin film on a substrate into contact with liquid gas or super critical gas after pattern exposing it. CONSTITUTION:A positive resist film is formed on the semiconducter substrate 1, and irradiated with radiation such as ultra violet rays, etc., through a photomask. Then after placing the substrate 1 inside a vessel 5, the liquid gas or the super critical gas 6 is lead in, selectively dissolving the resist film 20, which has been irradiated by the ultra violet rays, forming a pattern by a resist film 21, which has not been irradiated. Because the stickiness of thin gas 6 is low, the pattern can be formed with high accuracy and high density, efficiently replacing the gas 6, which came into contact with the substrate 1, utilizing CO2 of super critical condition is preferable, and having it contain organic solvent is also preferable. Further, it is also preferable to utilize a negative shaped resist or a Langmuir-Blogett. |
