MANUFACTURE OF SEMICONDUCTOR CHIP

摘要

PURPOSE:To establish electric connection to a conductor pattern or to a grounding section without using bonding wires by a method wherein cutting planes and the the whole surface of each separated semiconductor element are covered with a conductive film and said conductive film is so retained that it remains connected to a grounding electrode on the surface. CONSTITUTION:Coverage is provided by a protective film 12 of silicon nitride or the like all over each FET 11 except on the opening 12a of a grounding electrode 11a and on a cutting margin 15a. Photoresist is applied to the entire surface of a wafer 10 and, using a photomask, a photoresist film 20 is formed to provide a cover on the entire surface except on the opening 12a and the outer circumference of each FET 11. The wafer 10 is then separated into FETs 11 along the cutting margin 15a, each of the resultant FETs 11 provided with a cutting plane 11b of a specified inclination. The FETs 11 are installed in a vacuum deposition vessel, wherein a metal film 40 of a double layer structure for example of Ti and Au is formed on the entire surface of each of the FETs 11. The FETs 11 are next placed in a peeling liquid, for the removal of the photoresist film 20 from the FETs 11. The metal film 40 is retained on each semiconductor chip, connected to the grounding electrode 11a, for electrical connection.