| 摘要 |
<p>PURPOSE:To reduce the generation of silicon fragments and prevent the short circuit and surface crack in assembling process from generating by a method wherein the kerf is made by moving a rotating blade to a semiconductor wafer and, after that, the blade is moved to the opposite direction for parting the wafer. CONSTITUTION:Each kerf is made so as to leave the uncut thickness of 50-100mum in a semiconductor wafer by moving a blade 3 from right to left. Next, the wafer 1 is turned by 90 degrees and, after that, the blade 3 is moved along scribing lines in the Y-axis direction so as to make kerfs having the same depth of cut as that of the kerf in X-axis direction. After the formation of the kerfs, the semiconductor wafer is again turned in a counterclockwise direction by 90 degrees. The blade 3 is moved along the kerf made along the scribing line in the X-axis direction to the direction opposite to the direction of movement at the formation of the kerf so as to cut to the depth, which reaches the halfway of the thickness of an adhesive tape 2 beneath the semiconductor wafer 1 in order to separate the semiconductor wafer into semiconductor elements. Similar operation is done to the kerf made along the scribing line in the Y-axis direction, resulting in completing the separation of the semiconductor wafer 1 into semiconductor elements.</p> |
