发明名称 |
PROCESS FOR MAKING AN IMPROVED DYNAMIC MEMORY CELL STRUCTURE |
摘要 |
A process is provided for making a conductive structure for a semiconductor circuit, such as a one device dynamic random access memory cell, which includes the steps of depositing a conductive layer on a surface of a semiconductor substrate having a given type conductivity spaced from a storage node, depositing a layer of polysilicon over the conductive layer, depositing a layer of photoresist over the polysilicon layer, defining an opening in the photoresist layer and implanting ions of a conductivity type opposite to that of the given type conductivity through the opening and the polysilicon layer into the semiconductor substrate to form therein a conductive pocket or region having the opposite type conductivity resulting in, e.g., a highly conductive bit/sense line of a memory cell. |
申请公布号 |
DE3572890(D1) |
申请公布日期 |
1989.10.12 |
申请号 |
DE19853572890 |
申请日期 |
1985.06.11 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ISHAQ, MOUSA HANNA;NOBLE, WENDELL PHILLIPS, JR. |
分类号 |
H01L27/10;H01L21/265;H01L21/3213;H01L21/8242;H01L27/108;(IPC1-7):H01L21/31;H01L21/82 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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