| 摘要 |
<p>PURPOSE:To improve the reduction of production yield due to defective connection of a source wiring by forming an auxiliary source wiring formed by a source electrode forming material for an amorphous silicon thin film transistor under the source wiring formed by a transparent electrode layer. CONSTITUTION:A gate electrode 2 and a gate wiring 13 are formed on an insulating substrate 1, a gate insulating layer 3, an amorphous silicone layer 4 and a protecting insulation layer 5 are successively stacked on the substrate 1 and then the layer 5 is selectively removed. Then an impurity silicon layer 6 and stacked and Ti is stacked as a metallic layer 7. Then the metallic layer 7 is etched to form the patterns of a source electrode 8, a drain electrode 9, an auxiliary source wiring 14. The layers 6, 4 are etched by using said patterns as masks to form the auxiliary source wiring 14. then ITO is stacked as a transparent conductive layer 10 and etched to form the source wiring 11 and the picture element electrode 12. Thus, a defective connection can be reduced by forming the auxiliary source wiring under the source wiring.</p> |
