| 摘要 |
PURPOSE:To decrease the manufacturing processes of a semiconductor device, and to reduce cost by simultaneously forming a channel region through ion implantation through an opening section and a mask edge section in a mask composed of a gate material. CONSTITUTION:A polycrystalline silicon layer 70 is deposited onto an n-type silicon substrate 1 through a gate oxide film 6, and an opening section 43 is shaped to the polycrystalline silicon layer 70 through photoetching by using a photo-resist film 3. When boron ions are implanted, a central section is changed into a p<+> layer 5 in high impurity concentration in a p layer, but sections under the polycrystalline silicon layer 70 are turned into p layers 8 in low impurity concentration. Consequently, the p layers 8 are employed as channel regions. The polycrystalline silicon layers are retreated through etching, and gates 7 are formed. n<+> source regions 9 are shaped, holding the channel regions 8, and a source electrode 10 is formed onto the source regions 9. |
