| 摘要 |
PURPOSE:To pass a larger backward base current between a collector and a base than a forward base current between the base and an emitter to the change of a base potential by setting a voltage between the collector and the emitter to a high voltage. CONSTITUTION:When the forward base current between the base and the emitter and the backward base current between the collector and the base are respectively defined to be IBE, ICB, a bipolar transistor in which the voltage VCE between the collector and the emitter is set so as to have IBE<ICB according to the base potential is used. Namely, when ¦IBE¦>¦ICB¦, a positive base current IB is obtained so as to observe in the areas of 0V<=VBE<0.45V and 0.87V<VBE and at the time of ¦IBE¦<¦ICB¦, a negative base current - IB is obtained so as to observe in the area of 0.45<VBE<0.87V. Thereby, according to the base potential, the backward base current as well as the forward base current can be passed. |
