发明名称 SILICON CARBIDE-BASED SINTERED BODY
摘要 PURPOSE:To obtain the subject sintered body having high strength and reduced electric specific resistance and easily undergoing electric spark machining by blending SiC powder with specified amts. of TiB2 powder and Al2O3 powder and sintering the blend in an inert gaseous atmosphere. CONSTITUTION:25-60 pts.wt. SiC powder is blended with 30-70 pts.wt. TiB2 powder and 3-15 pts.wt. Al2O3 powder or a precursor giving 3-15 pts.wt. Al2O3, e.g., aluminum alkoxide, and <=4 pts.wt. C, e.g., phenol resin convertible into carbide giving <=4 pts.wt. C is further added to the blend as required. The blend is then sintered at 1,700-2,000 deg.C in an inert gaseous atmosphere to obtain the title sintered body having >=500 MPa bending strength and <=10<-2>OMEGAcm electric specific resistance.
申请公布号 JPH01188473(A) 申请公布日期 1989.07.27
申请号 JP19880013376 申请日期 1988.01.23
申请人 TOSHIBA CERAMICS CO LTD 发明人 TASHIRO HIROSHI;NAKAMURA YOSHIO;ONISHI MASATOSHI
分类号 C04B35/565;C04B35/56;C04B35/58 主分类号 C04B35/565
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