| 摘要 |
PURPOSE:To reduce radiation damage to a substrate while forming the pattern of a thin-film having high accuracy by irradiating a positive type resist film with ion beams to shape a resist pattern and forming a resist pattern through the irradiation of electron beams to the resist pattern section. CONSTITUTION:The irradiation 13 of ion beams is executed extending over a specified area from the upper section of a positive type resist film 6. An upper layer section in the positive type resist film 6 is exposed in an extent that it is developed in approximately 1.2mum, and an upper exposure region 14a is shaped. A resist in the section of the upper exposure region 14a is melted and removed through development, thus forming an upper pattern 15. The irradiation 16 of electron beams is executed in a narrower area in the area of the upper pattern 15, and a lower exposure region 17a is shaped through exposure up to a substrate 1. Consequently, the irradiation region 17 of electron beams has an effect only on the slight one part of the substrate 1. The resist in the section of the lower exposure region 17a is melted and removed through development, and a lower pattern 18 as a resist pattern having a sectional shape is formed. |
