| 摘要 |
PURPOSE:To improve remarkably the resistance to latchup, and enable the high density integration, by constituting a dielectric isolation region, of a groove filled with insulative material or a semiconductor layer, and a field insulating film which is formed more deeply than a base region, and more widely than a groove region. CONSTITUTION:On a semiconductor substrate 10, an N-type epitaxial layer 12 is formed. Between the substrate 10 and the epitaxial layer 12, an N<+> type layer 11 is formed. By reactive ion etching, a groove 17 is formed which penetrates the epitaxial layer 12 and the N<+> type buried layer 11 and reaches the substrate 10. The groove is subjected to thermal oxidation, and an oxide film 19 is formed. Then the groove is filled with a polycrystal silicon layer 16 by chemical vapor growth. The upper part of the groove is flatten by etch back method or the like using a photoresist film. By LOCOS method, a field oxide film 18 is selectively formed on the upper part of the groove and an isolation region between a collector electrode lead-out part and a base region forming part.
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