| 摘要 |
PURPOSE:To obtain an emitting light wavelength suitable for a light source of an auxiliary optical system for an automatic focusing in a simple structure by specifying the impurity concentrations and thicknesses of a P-type GaAlAs clad layer, a GaAlAs active layer and an N-type GaAlAs clad layer. CONSTITUTION:The impurity concentration of a P-type GaAlAs clad layer 21 is formed in an inclined impurity concentration gradient in which it is 0.7-5X10<17>cm<-3> near a junction boundary to a GaAlAs active layer 22, and the surface becomes 5X10<17>cm<-3> or more of high concentration, and the impurity concentration of an N-type GaAlAs clad layer 23 is formed in an inclined impurity concentration gradient in which it is 0.5-4X10<17>cm<-3> near the junction boundary to the layer 22, and the surface becomes 5X10<17>cm<-3> or more of high concentration. Further, the thicknesses of the grown films are 50-200mum of the layer 21, 0.1-2mum of the layer 22, and 20-90mum of the layer 23. Thus, an emitting light wavelength suitable for a light source of an auxiliary optical system for an automatic focusing of a camera can be obtained. |
