| 摘要 |
PURPOSE:To carry out magnetron etching with high uniformity by providing a means for rotating an etching electrode fitted with a substrate in the plane of a uniform magnetic field in a vacuum vessel. CONSTITUTION:The etching electrode 2 fitted with the substrate 4 is rotated by a driving motor 7 through a rotating shaft 5 and an insulated transmission mechanism 6. A glow discharge is generated between the etching electrode 2 and a counter electrode 3 by the high-frequency power from a high-frequency power source 9, and the substrate 4 is etched. A reactive gas is supplied from the counter electrode 3 through a shower-type gas hole. The glow discharge generated between the electrodes 2 and 3 is confined on the surface of the rotating etching electrode 2 by the uniform magnetic field formed by a pair of rectangular magnetic circuits. The electron in the glow discharge is cyclodially moved on the surface of the etching electrode 2 by the action of the magnetic field, and the ionization efficiency of the neutral atom and molecule is enhanced. By this method, the deviation of the plasma can be compensated, and etching is carried out with high uniformity.
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