| 摘要 |
PURPOSE:To enable efficient growth of a cylindrical crystal capable of collecting a circular material in good yield, by providing a hollow cylindrical crystal substrate having one closed end and raw material gas feeding nozzles opposite to the opened end of the substrate. CONSTITUTION:A hollow cylindrical crystal substrate having one closed end is supported in the center of a reaction chamber by a rotating shaft and feeding nozzles for, e.g. H2Se gas and a Zn vapor-containing carrier gas, are oppositely provided at the opened end of the substrate. Plate substrates, as necessary, are provided around the substrate and heated at a crystal growth temperature by a heater provided around the plate substrates. Since the raw material gas is directly blown from the feeding nozzles on the interior of the hollow cylindrical substrate, crystal growth rate is extremely higher than that on the outside. Vapor synthesis is completed in a stage of successively depositing and filling up the interior of the substrate with the crystal. At this time, the crystal is grown even on the outside of the cylindrical substrate and the surrounding plate substrates. Furthermore, the deposition of the crystal in the interior of the cylindrical substrate can be made uniform by rotating the substrate. |
