| 摘要 |
<p>PURPOSE:To prevent the dusting of a foreign matter and the generation of the nonuniformity of film thickness, the nonuniformity of impurity concentration, etc., by boring a through-hole to a wafer base surface for a wafer sample base, inserting a wafer push-up means into the through-hole and connecting the wafer push-up means to an evacuation means. CONSTITUTION:A wafer push-up means 30 is inserted slidably into a through- hole 20 bored to a wafer sample base 4 without generating a clearance, and connected to an evacuation means to a hollow shape. Consequently, the wafer push-up means 30 can hold a wafer 6 strongly through evacuation. Accordingly, the overall volume of the through-hole 20 can be reduced, and the through-hole 20 may be formed only at one position of the sample base, thus inhibiting an adverse effect having the uniformity of temperature distribution. The wafer push-up means 30 requires no pin relief cavity, thus improving the uniformity of the temperature distribution of the wafer sample base 4, then hardly generating the dispersion of the nonuniformity of film thickness and impurity concentration. Possibility in which a reaction gas intrudes onto the contact surfaces of the wafer push-up means 30 and the through-hole 20 and flakes are formed and attached is removed.</p> |
