| 摘要 |
The tubular furnace, which is provided especially for semiconductor technology, is provided with one or more process tubes and one electrical heating device (2) for each process tube (1). In the axial direction, the process tube (1) has a plurality of mutually connected heating zones (3, 4, 5), which can optionally be heated at different intensities and are formed by individual heating windings (2.1, 2.2, 2.3) of the heating device (2). The heating device (2) has an inner heating winding (2.2) which extends over all the heating zones (3, 4, 5). Furthermore, outer heating windings (2.1, 2.3) are provided which surround the inner heating winding (2.2) essentially coaxially and whose connections, which are in each case at the ends of the process tube (1), lie approximately in a common plane with the end of the inner heating winding, that region of the inner heating winding (2.2) which is not enclosed by the outer heating windings (2.1, 23) forming the central heating zone (4). <IMAGE>
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