| 摘要 |
PURPOSE:To make it possible to perform epitaxial growing on a substrate having a large area and to decrease contamination due to inflow of gas at the same time, by providing a gas introducing baffle, which introduces the gas to the substrates efficiently in a broad range in each of a plurality of growing chambers. CONSTITUTION:A narrowing part 11 comprising a hole, which is provided in a disc 13 for concentrating a gas stream, and a gas introducing baffle 12, which has a shape of combination of a cone and a column, are provided on the downstream side of an InP growing chamber 2 and an InGaAs growing chamber 3. A holding plate 14 and a substrate 6 are arranged in the baffle. Thus the region in which growing gas flows is expanded. In this constitution, the effective area is increased. The growing gas from either of the growing chambers 2 or 3 is introduced into the baffle 12 efficiently through the narrowing part 11. The gas flowing through the other growing chamber flows along the outside of the baffle 12. Therefore the degree of contamination with the other growing gas in the epitaxial growing can be decreased.
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