| 摘要 |
PURPOSE:To reduce a signal delay by increasing the thickness of an insulating film of a wiring region of a groove separation type semiconductor integrated circuit to reduce a wiring capacity. CONSTITUTION:This semiconductor integrated circuit has an insulating film composed of first insulating films 9a, 9b covered at least on the surface of an element region, and a second insulating film 2 covered on a region except the region covered with the films 9a, 9b, having a thickness larger than the films 9a, 9b and a substantially flat surface from the films 9a, 9b and continued at slow oblique. Thus, the film 2 of the region of wiring 1 is increased in thickness by the films 9a, 9b to reduce its wiring capacity to reduce the delay of a signal, thereby accelerating the operation of a semiconductor integrated circuit.
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