| 摘要 |
PURPOSE:To obtain the titled film having high light resisting power against laser ray, without giving change to optical characteristics by forming a silicon dioxide film on an aluminum oxide film in this order on the surface of a tellurium dioxide substrate. CONSTITUTION:The titled film is formed by laminating the silicon dioxide (SiO2) film on the aluminum oxide (Al2O3) film on at least one surface of the tellurium dioxide (TeO2) substrate which is polished for an acoustooptic element. Thus, the TeO2 substrate of the acoustooptic device does not almost change the optical characteristics, and reflection loss is small, thereby taking out the laser ray with good efficiency, even in the case that the polarization state of the laser ray incident upon said TeO2 substrate is either ordinary ray incidence or extraordinary ray incidence. And, the titled film can be proof against the continuous irradiation of the laser ray. |
