Layered amorphous silicon alloy photoconductive electrostatographic imaging members with p, n multijunctions

摘要

An imaging member comprised of a supporting substrate, a p,n multijunction photogenerating layer comprised of from about 8 to about 100 alternating layers of components selected from the group consisting of hydrogenated amorphous silicon, hydrogenated amorphous germanium, and alloys of hydrogenated amorphous silicon and hydrogenated amorphous germanium; and a charge transporting layer.