| 摘要 |
PURPOSE:To obtain a NVRAM with high circuit integration and high bit capacity by connecting a drain of a nonvolatile memory element to a power voltage line and connecting the source to an input/output terminal of a flip-flop to improve the minimum write voltage in the nonvolatile memory element. CONSTITUTION:The nonvolatile memory element 4 is connected between a voltage Vcc and an input/output terminal of the flip-flop 1, and since a node (q) is at a ground level or a power voltage Vcc level by data of the flip-flop, the data is written in the nonvolatile memory element 41. A write current flows to a Vcc line, the nonvolatile memory element 4, and the flip-flop 1 in this order, the voltage drop at a driver 5 is eliminated in comparison with a conventional device, a current flows to the flip-flop 1 via its driver transistor and the voltage drop is small. Since a current through a high-resistance load does not flow to a high-resistance load type flip-flop, the NVRAM is realized even by using a SRAM of this type. This is advantageous for circuit integration and large capacity forming together with the reduction in size resulting from the fact that the driver supplies power only to the flip-flop. |
