| 摘要 |
PURPOSE:To realize a visible light sensor absorbing visible light and transmitting near-infrared radiation and to decrease the number of optical components, by sequentially forming a transparent electrode, a photodiode consisting of amorphous semiconductors and a transparent electrode on a substrate. CONSTITUTION:ITO is formed on a glass substrate 1 and SnO2 is formed thereon to form a transparent electrode 2. Further, a Ptype layer of amorphous Si:H doped with B and representing Ptype semiconductor characteristics is provided on the electrode 2. An intrinsic layer 4 of non-doped amorphous Si :H is provided on the P-type layer 3 and an N-type layer 5 of amorphous Si:H doped with P and representing N-type semiconductor characteristics is provided on the intrinsic layer 4. A transparent electrode 6 of ITO is provided thereon. The layers 3-5 are deposited by the plasma CVD process and the electrodes 2 and 6 are deposited by the spattering process. The layers 3-5 constitute a PIN-type photodiode which functions as a visible light sensor sensing incident light from the substrate 1. |
