| 摘要 |
PURPOSE:To improve the working rate of the titled device by providing an inert gas supply pipe close to the inside of a light transmitting window for radiated UV rays, and blowing off an inert gas from a nozzle to prevent the coating of the reaction product on the surface of the light transmitting window. CONSTITUTION:A substrate 6 placed on a substrate holder 5 is heated by a heater 4 to a specified temp. in the reaction vessel 1 provided with a gas outlet 10. A gaseous reactant is then introduced from the supply pipe 9 to keep the pressure in the reaction vessel 1 at a specified value. UV rays are simultaneously radiated from a low-pressure mercury lamp 3 through the light transmitting window 2 provided on the upper surface. The gaseous reactant is excited and decomposed by the UV rays to deposit a film due to the reaction on the surface of the substrate 6. An annular inert gas supply pipe 7 is arranged close to the inner surface side of the light transmitting window 2 in the photochemical vapor deposition device, and an inert gas is blown off to the inner surface side of the light transmitting window 2 from the nozzles 8 provided at regular intervals on the circumferential surface. As a result, the coating of the reaction product on the surface of the light transmitting window 2 is prevented. |
