| 摘要 |
PURPOSE:To obtain the lead material having superior antioxidation property, solder wetness together with superior strength, electrical conductivity and heat resistance by a method wherein Cu alloy containing Mn, Zn, Ni and Al having the ratio in the specified range is used for the lead material of the semiconductor device. CONSTITUTION:Cu alloy having the composition consisting of 7-15wt% Mn, 10-30wt% Zn, 0.2-10wt% Ni, and 0.1-3wt% Al, and Cu and inevitable impurities of the remnant is used for the lead material of a semiconductor device. The Cu alloy is furnished with the whole characteristics required for the lead material of the semiconductor device, and moreover it has superior antioxidation property. The Mn component enhances strength of the alloy, while it has action to suppress remarkably the formation of an oxide film provided that it is coexisting with the Zn component. The Ni component has action to enhance strength and heat resistance. Moreover the Al component enhances remarkably strength and heat resistance of the alloy, and moreover it has action to enable to manufacture a sound ingot acting as a powerful deoxidizer when it is molten. |
