| 摘要 |
PURPOSE:To obtain an ashing end-point detector adequate to sheet processing by mounting an exhauster and a measuring instrument for the specific quantity of a gas to an ashing device using a gas flow containing O3. CONSTITUTION:A gas outflow section 22 is oppositely arranged separated at a set interval from a wafer 28, and O3+O2 gases from an opening for a plate section in the section 22 are cooled at 15-50 deg.C by a cooler for the outflow section 22, and fed to the wafer 28 temperature-regulated 6 at 150-500 deg.C. A gas formed by a chemical reaction with a film on the surface of the wafer 28 is discharged 4, the quantity of CO2 gas is measured by a gas analyzer 7, and the time when gas concentration is reduced to a predetermined value or less is detected 8, and decided to be the completion of ashing. The wafer or the gas outflow section can be moved vertically. According to the device, the film applied onto the wafer can be ashed and treated without damaging the wafer.
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