| 摘要 |
PURPOSE:To prevent spots form being produced on a light-receiving surface caused by residual organic materials or the like and to prevent the passivation effect of an anti-reflection film from being deteriorated, by forming a rear-face electrode on the rear face of a thin (less than 150mum) substrate, heat treating the substrate for providing ohmic contact between the top-face and rear-face electrodes and, directly after that, forming an anti-reflection film on the light- receiving surface of the substrate. CONSTITUTION:An Si substrate is etched from the rear face so as to decrease he thickness thereof to be 150mum or less. After a rear-face electrode is formed on the rear face, the substrate is heat treated to provide ohmic contact between the top-face and rear-face electrodes. Directly after that, an anti-reflection film is provided on the light-receiving surface of the substrate. The anti- reflection film is formed of silicon nitride (SiN) or the like by means of the plasma CVD. The substrate is then scribed for separation. |
