发明名称 SILICONE RESIST MATERIAL
摘要 PURPOSE:To obtain high resistance to reactive sputter-etching by oxygen by consisting the titled material of a polyorganosiloxane consisting of a specific constituting unit and having a vinyl group in one molecule and specific polyorganosiloxane azide. CONSTITUTION:This material consists of the polyorganosiloxane consisting of the constituting unit expressed by average unit formula I and having at least one vinyl group in one molecule and the polyorganosiloxane azide expressed by formula II. In formula I, R<1> denotes a substd. or non-substd. monovalent hydrocarbon group, R<2> denotes a hydrogen atom or alkyl group of 1-4C, (a) denotes 0.8-1.7 number; (b) denotes 0-0.6 number. In formula II, R<3>-R<6> denote respectively the same or different monovalent hydrocarbon groups selected from the group consisting of an alkyl group, phenyl group, etc., R<7> denotes a divalent hydrocarbon group of 1-10C, Y denotes hydrogen atom, a group selected from the group consisting of an alkyl group, etc., m denotes 0-300 integer, in denotes 1-300 integer, n+m denotes 1-300 integer.
申请公布号 JPS6340142(A) 申请公布日期 1988.02.20
申请号 JP19860183348 申请日期 1986.08.06
申请人 TOSHIBA SILICONE CO LTD 发明人 YAMAOKA TSUGIO;KOSEKI KENICHI
分类号 H01L21/027;G03F7/075 主分类号 H01L21/027
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