A METHOD OF MANUFACTURING A MIS TYPE SEMICONDUCTOR DEVICE

摘要

In a method of manufacturing an MIS type semiconductor device, an impurity region (16 min ) is formed by implanting ions into a substrate (11) using a plurality of implantation energies and dosages, such that the peak of impurity concentration in the region does not exceed the electrically active solubility of the impurity. The impurity region (16 min ) is then irradiated by an energy beam to activate the implanted impurity (16a, 16b) without any substantial redistribution thereof.