| 摘要 |
PURPOSE:To improve the throughput of epitaxial growth by atomically planely doping an impurity to the vicinity of a boundary between a semiconductor substrate and a buffer layer to reduce a necessary thickness of the buffer layer. CONSTITUTION:An Si atomic plane doping 2 of 1.5X10<12>cm<-2> is, for example, executed on a semi-insulating GaAs substrate 1, a non-doped I-type GaAs buffer layer 3, a non-doped I-type Al0.3Ga0.7As spacer layer 4a, and an n-type Al0.3Ga0.7 As electron supplying layer 4b are continuously doped, for example, approx. 1X10<18>cm<-3>, an n-type GaAs cap layer 5 is doped, for example, approx. 1X10<18>cm<-3> to be respectively grown. According to this method, an impurity is atomically planely doped at 2 to the vicinity of a boundary between the substrate 1 and the layer 3 to generate carrier of the density which cannot be obtained in the conventional tertiary doping, thereby eliminating a carrier vanishing layer. |
