| 摘要 |
PURPOSE:To obtain a radiation-sensitive resist material superior in etching resistance, high in sensitivity, and capable of forming a fine resist pattern without swelling, deforming, and bridging of the resist pattern in a developing solution by using a polymer specified in composition as the radiation-sensitive resist material. CONSTITUTION:The radiation-sensitive resist material can be obtained by polymerizing in an organic solvent or water a mixture of 3 kinds of monomers represented by formulae I, II, and III to form a copolymer or polymerizing each monomer separately and mixing each homopolymer to obtain a polymer mixture, both having a composition of 10-80mol%, 10-80mol%, and 0-80mol%, respectively. In the formulae, each of X, Y is halogen; each of R1, R2, R3, R5 is H or methyl; R4 is alkyl; each of m, p is 0 or a positive integer; each of n, q is a positive integer; m + n <=5; p + q <=5; R6 is alkyl; and r is an integer of 0-5. |
