| 摘要 |
PURPOSE:To grow each layer constituting double hetero-junctions easily by growing several layer forming the double-junctions onto a current block layer with a hole in a liquid-layer epitaxial manner after a meltback process. CONSTITUTION:A current block layer in a wafer is etched up to its midway of thickness to form a circular groove, the wafer is admitted into a growth furnace, and a hole 14 for a current path reaching an AlGaAs layer 11 as a foundation is shaped to the current block layer 12 by using a meltback on liquid-phase epitaxial growth. A P-type AlGaAs first clad layer 20, a P-type AlGaAs active layer 22 and an N-type AlGaAs second clad layer 24 constituting double hetero-junctions are grown in a LPE manner by the same LPE growth process in the same growth furnace. A P-type GaAs spare substrate 10 is removed completely through etching, thus operating the P-type AlGaAs layer 11 as an original substrate for the surface light-emitting element. Accordingly, the surface of the AlGaAs layers are not oxidized, thus improving the crystallizability of each layer being grown. |
