| 摘要 |
PURPOSE:To shorten time required for inspection when the electrical characteristic of unit elements on a semiconductor wafer is inspected, by a method wherein the electrical characteristic of the whole of lines is measured with respect to each line and each column and an assumption is made from the measurement that a separate circuit element located at a crossing position of an abnormal line and an abnormal column is abnormal. CONSTITUTION:When it is assumed that separate circuit elements are diodes and that a reverse voltage resistance characteristic is to be inspected, P-N junctions are connected in series sequentially, and an N pole is connected to the P pole of an adjacent element, while a P pole is connected to the N pole of an adjacent element on the opposite side. The diodes in the number of (m) are connected in series in this way, and two terminals are obtained. The reverse voltage resistance characteristic is examined by applying a voltage to said terminals. The examination is conducted with respect to both lines l and columns (k). When an abnormal result of measurement is found out with respect to an i-th line li and also with respect to a j-th column kj, it can be concluded that there is some abnormality in an ij-th separate circuit element whereat abnormal line and column intersect each other. Then it is only required to examine the characteristic of the ij-th element afresh. |
