发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 <p>A method of manufacturing a semiconductor device, in which there is applied to a surface of a semiconductor substrate a base layer of photosensitive lacquer, which is coated with a top layer of photosensitive lacquer. By means of a first patterned irradiation, there is formed in the top layer a mask of which a contact copy is formed in the base layer during a second irradiation. A material which can be discolored is used for the top layer. During the first irradiation, the top layer is locally discolored, whereupon the layer thus discolored is used as a mask during the second irradiation. By the use of the discoloring top layer, additional processing steps, which would ensure from a wet development of the top layer, are avoided.</p>
申请公布号 JPS61189640(A) 申请公布日期 1986.08.23
申请号 JP19860029933 申请日期 1986.02.15
申请人 PHILIPS GLOEILAMPENFAB:NV 发明人 FURANSHISUKASU ANTONIUSU FUOORENBUROEKU;YAN HERARUDO DEIRU;HENRIKASU YOHANESU YAKOBUSU KUROON;ERIZABESU YAKOBA SUPIERUTSU;UIRUHERUMUSU PETERU MARUCHINUSU NEISEN
分类号 G03F7/26;G03F1/00;G03F1/08;G03F7/095;G03F7/20;H01L21/027;H01L21/30 主分类号 G03F7/26
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