摘要 |
<p>A method of manufacturing a semiconductor device, in which there is applied to a surface of a semiconductor substrate a base layer of photosensitive lacquer, which is coated with a top layer of photosensitive lacquer. By means of a first patterned irradiation, there is formed in the top layer a mask of which a contact copy is formed in the base layer during a second irradiation. A material which can be discolored is used for the top layer. During the first irradiation, the top layer is locally discolored, whereupon the layer thus discolored is used as a mask during the second irradiation. By the use of the discoloring top layer, additional processing steps, which would ensure from a wet development of the top layer, are avoided.</p> |