| 摘要 |
PURPOSE:To enable to actuate a photo diode at the room temperature while making wave length region variavle by a method wherein a receptive part of photodiode array is coated with a thin film to convert incoming infrared rays into electric signals. CONSTITUTION:A P-type region and an N-type region are successively formed on an N type substrate 1. A thin film 3 is formed on a P<+> layer 2 of Si diode by evaporating Ge to be heated. B is diffused from Si side to convert the thin film 3 into P<+> forming a band structure. The Si diode to be the substrate 1 assumed to be a part of diode by the layer 3 coated on the Si diode may be immediately changed into an infrared ray image senser of Ge by means of utilizing the scanning part of silicon for signal processing process. Through these procedures, the Si diode may be actuated at the room temperature making wave length region variable as well as changing wave length by changing the positional arrangement. |
