| 摘要 |
<p>PURPOSE:To reduce excess area width, by using Cr with a specific thickness as a mask layer for forming a pattern by electron beam exposure. CONSTITUTION:As a mask layer 2a which is provided on a glass substrate 1 in order to form a mask pattern by electron beam exposure, Cr is used, having a thickness of 0.4-1.5mum. By forming a thick layer 2a to increase heat dissipation radiated from the irradiation region, ambient temperature rise is reduced and therefore chemical reaction can be prevented from occuring there to reduce width of excess area. The thickness of the layer 2a is preferably over 0.4mum on account of heat conduction and below 1.5mum because depth of focus of the electron beam exposing apparatus is generally about 1-3mum. Thus the removed region 6 pattern of the layer 2a would coincide with the removed region 5 pattern of the resist layer 3.</p> |
