发明名称 |
Imaging device having enhanced quantum efficiency |
摘要 |
An imaging device such as a silicon vidicon has a wafer of single crystal semiconductor material having an input sensing region and a charge storage region. A potential barrier is included within the input sensing region for controlling blooming. A passivation region is also included within the input sensing region to stabilize the atomic energy level along a first surface of the wafer. An anti-reflection layer of zinc sulfide and an anti-reflection layer of magnesium fluoride or Cryolite are sequentially deposited on the first surface of the wafer. The two anti-reflection layers form an anti-reflection region which enhances the quantum efficiency of the device in the wavelength range of 400 to 500 nanometers. Each of the layers has an optical thickness substantially equal to a quarter of the wavelength of light incident on the device. A method of forming the anti-reflection region is also disclosed.
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申请公布号 |
US4594605(A) |
申请公布日期 |
1986.06.10 |
申请号 |
US19830489303 |
申请日期 |
1983.04.28 |
申请人 |
RCA CORPORATION |
发明人 |
KRAMER, WILLIAM M. |
分类号 |
H01J9/233;H01J29/45;H01L31/0216;(IPC1-7):H01J31/00;H01L31/00 |
主分类号 |
H01J9/233 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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