| 摘要 |
PURPOSE:To obtain the high quality compound semiconductor crystal wafer having low density of impurities, to be turned to a carrier, and a low dislocation density by a method wherein a compound semiconductor is epitaxially grown on the semi-insulative compound semiconductor substrate having the specific dislocation density formed by adding neutral impurities. CONSTITUTION:An epitaxial compound semiconductor layer of high impurity and high resistance is provided on the bulk substrate having the dislocation density reduced to 20cm<-2> or below by adding neutral impurities. A semi- insulative GaAs substrate 41 is formed by cutting the single crystal ingot grown by adding In43, which is the neutral impurity of 8X10<18>cm<-3> at the largest, under the growing condition of semi-insulative GaAs crystal by performing a non-doped LEC method, for example. The substrate 41 is brought into the state of low dislocation of 8cm<-2> or thereabout by addint In. A non-doped highly resistant epitaxial GaAs layer 42 is grown on the substrate 41 by performing a hydride process. The carrier density of the layer 42 is 1X10<14>cm<-3> or below and its specific resistance is 4X10<5>OMEGA-cm, and the layer 42 has sufficiently high purity and resistance. The dislocation density of the layer 42 is 8cm<-2>. |
