| 摘要 |
PURPOSE:To improve high-frequency characteristics, and to enable operation by one power supply by adjacently mounting a parallel plate capacitor on the input side of a FET and connecting the capacitor and a source electrode for the FET. CONSTITUTION:A capacitor 1 is mounted in parallel while being adjoined to a FET2 on the input side where source electrodes 2s for the FET2 are arranged. The electrodes 2s and the capacitor 2 are connected by bonding wires 3. Consequently, the whole operating region of the FET2 can be grounded in the same length, thus sufficiently reducing unequal operation in the FET. The thickness and width of the capacitor 1 are formed so that differences with each of the FET are kept within a range of + or -20%. Accordingly, the uniform operation of the FET2 and the ease of operation of bonding can be realized. |
